u-boot-brain/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c
Akshay Saraswat aacdd79095 Exynos5420: Remove code for enabling read leveling
This patch intends to remove all code which enables hardware read
leveling. All characterization environments may not cope up with
h/w read leveling enabled, so we must disable this.
Also, disabling h/w read leveling improves the MIF LVcc value
(LVcc value is the value at which DDR will fail to work properly).
Improving LVcc means we have enough voltage margin for MIF.
When h/w leveling is enabled, we have almost zero volatge margin.

Signed-off-by: Alim Akhtar <alim.akhtar@samsung.com>
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Tested-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
2014-06-13 17:05:13 +09:00

563 lines
17 KiB
C

/*
* DDR3 mem setup file for board based on EXYNOS5
*
* Copyright (C) 2012 Samsung Electronics
*
* SPDX-License-Identifier: GPL-2.0+
*/
#include <config.h>
#include <asm/io.h>
#include <asm/arch/clock.h>
#include <asm/arch/cpu.h>
#include <asm/arch/dmc.h>
#include <asm/arch/power.h>
#include "common_setup.h"
#include "exynos5_setup.h"
#include "clock_init.h"
#define TIMEOUT 10000
#ifdef CONFIG_EXYNOS5250
static void reset_phy_ctrl(void)
{
struct exynos5_clock *clk =
(struct exynos5_clock *)samsung_get_base_clock();
writel(DDR3PHY_CTRL_PHY_RESET_OFF, &clk->lpddr3phy_ctrl);
writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl);
}
int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
{
unsigned int val;
struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl;
struct exynos5_dmc *dmc;
int i;
phy0_ctrl = (struct exynos5_phy_control *)samsung_get_base_dmc_phy();
phy1_ctrl = (struct exynos5_phy_control *)(samsung_get_base_dmc_phy()
+ DMC_OFFSET);
dmc = (struct exynos5_dmc *)samsung_get_base_dmc_ctrl();
if (reset)
reset_phy_ctrl();
/* Set Impedance Output Driver */
val = (mem->impedance << CA_CK_DRVR_DS_OFFSET) |
(mem->impedance << CA_CKE_DRVR_DS_OFFSET) |
(mem->impedance << CA_CS_DRVR_DS_OFFSET) |
(mem->impedance << CA_ADR_DRVR_DS_OFFSET);
writel(val, &phy0_ctrl->phy_con39);
writel(val, &phy1_ctrl->phy_con39);
/* Set Read Latency and Burst Length for PHY0 and PHY1 */
val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) |
(mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT);
writel(val, &phy0_ctrl->phy_con42);
writel(val, &phy1_ctrl->phy_con42);
/* ZQ Calibration */
if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
&phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
/* DQ Signal */
writel(mem->phy0_pulld_dqs, &phy0_ctrl->phy_con14);
writel(mem->phy1_pulld_dqs, &phy1_ctrl->phy_con14);
writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)
| (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT),
&dmc->concontrol);
update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
/* DQS Signal */
writel(mem->phy0_dqs, &phy0_ctrl->phy_con4);
writel(mem->phy1_dqs, &phy1_ctrl->phy_con4);
writel(mem->phy0_dq, &phy0_ctrl->phy_con6);
writel(mem->phy1_dq, &phy1_ctrl->phy_con6);
writel(mem->phy0_tFS, &phy0_ctrl->phy_con10);
writel(mem->phy1_tFS, &phy1_ctrl->phy_con10);
val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) |
(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
(mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) |
(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
writel(val, &phy0_ctrl->phy_con12);
writel(val, &phy1_ctrl->phy_con12);
/* Start DLL locking */
writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT),
&phy0_ctrl->phy_con12);
writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT),
&phy1_ctrl->phy_con12);
update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
&dmc->concontrol);
/* Memory Channel Inteleaving Size */
writel(mem->iv_size, &dmc->ivcontrol);
writel(mem->memconfig, &dmc->memconfig0);
writel(mem->memconfig, &dmc->memconfig1);
writel(mem->membaseconfig0, &dmc->membaseconfig0);
writel(mem->membaseconfig1, &dmc->membaseconfig1);
/* Precharge Configuration */
writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
&dmc->prechconfig);
/* Power Down mode Configuration */
writel(mem->dpwrdn_cyc << PWRDNCONFIG_DPWRDN_CYC_SHIFT |
mem->dsref_cyc << PWRDNCONFIG_DSREF_CYC_SHIFT,
&dmc->pwrdnconfig);
/* TimingRow, TimingData, TimingPower and Timingaref
* values as per Memory AC parameters
*/
writel(mem->timing_ref, &dmc->timingref);
writel(mem->timing_row, &dmc->timingrow);
writel(mem->timing_data, &dmc->timingdata);
writel(mem->timing_power, &dmc->timingpower);
/* Send PALL command */
dmc_config_prech(mem, &dmc->directcmd);
/* Send NOP, MRS and ZQINIT commands */
dmc_config_mrs(mem, &dmc->directcmd);
if (mem->gate_leveling_enable) {
val = PHY_CON0_RESET_VAL;
val |= P0_CMD_EN;
writel(val, &phy0_ctrl->phy_con0);
writel(val, &phy1_ctrl->phy_con0);
val = PHY_CON2_RESET_VAL;
val |= INIT_DESKEW_EN;
writel(val, &phy0_ctrl->phy_con2);
writel(val, &phy1_ctrl->phy_con2);
val = PHY_CON0_RESET_VAL;
val |= P0_CMD_EN;
val |= BYTE_RDLVL_EN;
writel(val, &phy0_ctrl->phy_con0);
writel(val, &phy1_ctrl->phy_con0);
val = (mem->ctrl_start_point <<
PHY_CON12_CTRL_START_POINT_SHIFT) |
(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
(mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) |
(mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) |
(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
writel(val, &phy0_ctrl->phy_con12);
writel(val, &phy1_ctrl->phy_con12);
val = PHY_CON2_RESET_VAL;
val |= INIT_DESKEW_EN;
val |= RDLVL_GATE_EN;
writel(val, &phy0_ctrl->phy_con2);
writel(val, &phy1_ctrl->phy_con2);
val = PHY_CON0_RESET_VAL;
val |= P0_CMD_EN;
val |= BYTE_RDLVL_EN;
val |= CTRL_SHGATE;
writel(val, &phy0_ctrl->phy_con0);
writel(val, &phy1_ctrl->phy_con0);
val = PHY_CON1_RESET_VAL;
val &= ~(CTRL_GATEDURADJ_MASK);
writel(val, &phy0_ctrl->phy_con1);
writel(val, &phy1_ctrl->phy_con1);
writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config);
i = TIMEOUT;
while ((readl(&dmc->phystatus) &
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) !=
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) {
/*
* TODO(waihong): Comment on how long this take to
* timeout
*/
sdelay(100);
i--;
}
if (!i)
return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
writel(CTRL_RDLVL_GATE_DISABLE, &dmc->rdlvl_config);
writel(0, &phy0_ctrl->phy_con14);
writel(0, &phy1_ctrl->phy_con14);
val = (mem->ctrl_start_point <<
PHY_CON12_CTRL_START_POINT_SHIFT) |
(mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) |
(mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) |
(mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) |
(mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) |
(mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT);
writel(val, &phy0_ctrl->phy_con12);
writel(val, &phy1_ctrl->phy_con12);
update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
}
/* Send PALL command */
dmc_config_prech(mem, &dmc->directcmd);
writel(mem->memcontrol, &dmc->memcontrol);
/* Set DMC Concontrol and enable auto-refresh counter */
writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)
| (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &dmc->concontrol);
return 0;
}
#endif
#ifdef CONFIG_EXYNOS5420
int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset)
{
struct exynos5420_clock *clk =
(struct exynos5420_clock *)samsung_get_base_clock();
struct exynos5420_power *power =
(struct exynos5420_power *)samsung_get_base_power();
struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl;
struct exynos5420_dmc *drex0, *drex1;
struct exynos5420_tzasc *tzasc0, *tzasc1;
uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1;
int chip;
int i;
phy0_ctrl = (struct exynos5420_phy_control *)samsung_get_base_dmc_phy();
phy1_ctrl = (struct exynos5420_phy_control *)(samsung_get_base_dmc_phy()
+ DMC_OFFSET);
drex0 = (struct exynos5420_dmc *)samsung_get_base_dmc_ctrl();
drex1 = (struct exynos5420_dmc *)(samsung_get_base_dmc_ctrl()
+ DMC_OFFSET);
tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc();
tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc()
+ DMC_OFFSET);
/* Enable PAUSE for DREX */
setbits_le32(&clk->pause, ENABLE_BIT);
/* Enable BYPASS mode */
setbits_le32(&clk->bpll_con1, BYPASS_EN);
writel(MUX_BPLL_SEL_FOUTBPLL, &clk->src_cdrex);
do {
val = readl(&clk->mux_stat_cdrex);
val &= BPLL_SEL_MASK;
} while (val != FOUTBPLL);
clrbits_le32(&clk->bpll_con1, BYPASS_EN);
/* Specify the DDR memory type as DDR3 */
val = readl(&phy0_ctrl->phy_con0);
val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
writel(val, &phy0_ctrl->phy_con0);
val = readl(&phy1_ctrl->phy_con0);
val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
writel(val, &phy1_ctrl->phy_con0);
/* Set Read Latency and Burst Length for PHY0 and PHY1 */
val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) |
(mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT);
writel(val, &phy0_ctrl->phy_con42);
writel(val, &phy1_ctrl->phy_con42);
val = readl(&phy0_ctrl->phy_con26);
val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
writel(val, &phy0_ctrl->phy_con26);
val = readl(&phy1_ctrl->phy_con26);
val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
writel(val, &phy1_ctrl->phy_con26);
/*
* Set Driver strength for CK, CKE, CS & CA to 0x7
* Set Driver strength for Data Slice 0~3 to 0x7
*/
val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) |
(0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET);
val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) |
(0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET);
writel(val, &phy0_ctrl->phy_con39);
writel(val, &phy1_ctrl->phy_con39);
/* ZQ Calibration */
if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
&phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
clrbits_le32(&phy0_ctrl->phy_con16, ZQ_CLK_DIV_EN);
clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN);
/* DQ Signal */
val = readl(&phy0_ctrl->phy_con14);
val |= mem->phy0_pulld_dqs;
writel(val, &phy0_ctrl->phy_con14);
val = readl(&phy1_ctrl->phy_con14);
val |= mem->phy1_pulld_dqs;
writel(val, &phy1_ctrl->phy_con14);
val = MEM_TERM_EN | PHY_TERM_EN;
writel(val, &drex0->phycontrol0);
writel(val, &drex1->phycontrol0);
writel(mem->concontrol |
(mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
&drex0->concontrol);
writel(mem->concontrol |
(mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
&drex1->concontrol);
do {
val = readl(&drex0->phystatus);
} while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
do {
val = readl(&drex1->phystatus);
} while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
clrbits_le32(&drex0->concontrol, DFI_INIT_START);
clrbits_le32(&drex1->concontrol, DFI_INIT_START);
update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3);
update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3);
/*
* Set Base Address:
* 0x2000_0000 ~ 0x5FFF_FFFF
* 0x6000_0000 ~ 0x9FFF_FFFF
*/
/* MEMBASECONFIG0 */
val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_0) |
DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
writel(val, &tzasc0->membaseconfig0);
writel(val, &tzasc1->membaseconfig0);
/* MEMBASECONFIG1 */
val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_1) |
DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
writel(val, &tzasc0->membaseconfig1);
writel(val, &tzasc1->membaseconfig1);
/*
* Memory Channel Inteleaving Size
* Ares Channel interleaving = 128 bytes
*/
/* MEMCONFIG0/1 */
writel(mem->memconfig, &tzasc0->memconfig0);
writel(mem->memconfig, &tzasc1->memconfig0);
writel(mem->memconfig, &tzasc0->memconfig1);
writel(mem->memconfig, &tzasc1->memconfig1);
/* Precharge Configuration */
writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
&drex0->prechconfig0);
writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
&drex1->prechconfig0);
/*
* TimingRow, TimingData, TimingPower and Timingaref
* values as per Memory AC parameters
*/
writel(mem->timing_ref, &drex0->timingref);
writel(mem->timing_ref, &drex1->timingref);
writel(mem->timing_row, &drex0->timingrow0);
writel(mem->timing_row, &drex1->timingrow0);
writel(mem->timing_data, &drex0->timingdata0);
writel(mem->timing_data, &drex1->timingdata0);
writel(mem->timing_power, &drex0->timingpower0);
writel(mem->timing_power, &drex1->timingpower0);
if (reset) {
/*
* Send NOP, MRS and ZQINIT commands
* Sending MRS command will reset the DRAM. We should not be
* reseting the DRAM after resume, this will lead to memory
* corruption as DRAM content is lost after DRAM reset
*/
dmc_config_mrs(mem, &drex0->directcmd);
dmc_config_mrs(mem, &drex1->directcmd);
} else {
/*
* During Suspend-Resume & S/W-Reset, as soon as PMU releases
* pad retention, CKE goes high. This causes memory contents
* not to be retained during DRAM initialization. Therfore,
* there is a new control register(0x100431e8[28]) which lets us
* release pad retention and retain the memory content until the
* initialization is complete.
*/
writel(PAD_RETENTION_DRAM_COREBLK_VAL,
&power->pad_retention_dram_coreblk_option);
do {
val = readl(&power->pad_retention_dram_status);
} while (val != 0x1);
/*
* CKE PAD retention disables DRAM self-refresh mode.
* Send auto refresh command for DRAM refresh.
*/
for (i = 0; i < 128; i++) {
for (chip = 0; chip < mem->chips_to_configure; chip++) {
writel(DIRECT_CMD_REFA |
(chip << DIRECT_CMD_CHIP_SHIFT),
&drex0->directcmd);
writel(DIRECT_CMD_REFA |
(chip << DIRECT_CMD_CHIP_SHIFT),
&drex1->directcmd);
}
}
}
if (mem->gate_leveling_enable) {
writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0);
writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0);
setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN);
setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN);
val = PHY_CON2_RESET_VAL;
val |= INIT_DESKEW_EN;
writel(val, &phy0_ctrl->phy_con2);
writel(val, &phy1_ctrl->phy_con2);
val = readl(&phy0_ctrl->phy_con1);
val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
writel(val, &phy0_ctrl->phy_con1);
val = readl(&phy1_ctrl->phy_con1);
val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
writel(val, &phy1_ctrl->phy_con1);
n_lock_r = readl(&phy0_ctrl->phy_con13);
n_lock_w_phy0 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
n_lock_r = readl(&phy0_ctrl->phy_con12);
n_lock_r &= ~CTRL_DLL_ON;
n_lock_r |= n_lock_w_phy0;
writel(n_lock_r, &phy0_ctrl->phy_con12);
n_lock_r = readl(&phy1_ctrl->phy_con13);
n_lock_w_phy1 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
n_lock_r = readl(&phy1_ctrl->phy_con12);
n_lock_r &= ~CTRL_DLL_ON;
n_lock_r |= n_lock_w_phy1;
writel(n_lock_r, &phy1_ctrl->phy_con12);
val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4;
for (chip = 0; chip < mem->chips_to_configure; chip++) {
writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
&drex0->directcmd);
writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
&drex1->directcmd);
}
setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN);
setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN);
setbits_le32(&phy0_ctrl->phy_con0, CTRL_SHGATE);
setbits_le32(&phy1_ctrl->phy_con0, CTRL_SHGATE);
val = readl(&phy0_ctrl->phy_con1);
val &= ~(CTRL_GATEDURADJ_MASK);
writel(val, &phy0_ctrl->phy_con1);
val = readl(&phy1_ctrl->phy_con1);
val &= ~(CTRL_GATEDURADJ_MASK);
writel(val, &phy1_ctrl->phy_con1);
writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config);
i = TIMEOUT;
while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) !=
RDLVL_COMPLETE_CHO) && (i > 0)) {
/*
* TODO(waihong): Comment on how long this take to
* timeout
*/
sdelay(100);
i--;
}
if (!i)
return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config);
writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config);
i = TIMEOUT;
while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) !=
RDLVL_COMPLETE_CHO) && (i > 0)) {
/*
* TODO(waihong): Comment on how long this take to
* timeout
*/
sdelay(100);
i--;
}
if (!i)
return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
writel(CTRL_RDLVL_GATE_DISABLE, &drex1->rdlvl_config);
writel(0, &phy0_ctrl->phy_con14);
writel(0, &phy1_ctrl->phy_con14);
val = (0x3 << DIRECT_CMD_BANK_SHIFT);
for (chip = 0; chip < mem->chips_to_configure; chip++) {
writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
&drex0->directcmd);
writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
&drex1->directcmd);
}
/* Common Settings for Leveling */
val = PHY_CON12_RESET_VAL;
writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12);
writel((val + n_lock_w_phy1), &phy1_ctrl->phy_con12);
setbits_le32(&phy0_ctrl->phy_con2, DLL_DESKEW_EN);
setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN);
}
/* Send PALL command */
dmc_config_prech(mem, &drex0->directcmd);
dmc_config_prech(mem, &drex1->directcmd);
writel(mem->memcontrol, &drex0->memcontrol);
writel(mem->memcontrol, &drex1->memcontrol);
/*
* Set DMC Concontrol: Enable auto-refresh counter, provide
* read data fetch cycles and enable DREX auto set powerdown
* for input buffer of I/O in none read memory state.
*/
writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
DMC_CONCONTROL_IO_PD_CON(0x2),
&drex0->concontrol);
writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
(mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
DMC_CONCONTROL_IO_PD_CON(0x2),
&drex1->concontrol);
/*
* Enable Clock Gating Control for DMC
* this saves around 25 mw dmc power as compared to the power
* consumption without these bits enabled
*/
setbits_le32(&drex0->cgcontrol, DMC_INTERNAL_CG);
setbits_le32(&drex1->cgcontrol, DMC_INTERNAL_CG);
return 0;
}
#endif