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e013bead30
So far the DRAM driver for the H3 SoC (and apparently boot0/libdram as well) only applied coarse delay line settings, with one delay value for all the data lines in each byte lane and one value for the control lines. Instead of setting the delays for whole bytes only allow setting it for each individual bit. Also add support for address/command lane delays. For the purpose of this patch the rules for the existing coarse settings were just applied to the new scheme, so the actual register writes don't change for the H3. Other SoCs will utilize this feature later properly. With a stock GCC 5.3.0 this increases the dram_sun8i_h3.o code size from 2296 to 2344 Bytes. [Andre: move delay parameters into macros to ease later sharing, use defines for numbers of delay registers, extend commit message] Signed-off-by: Jens Kuske <jenskuske@gmail.com> Signed-off-by: Andre Przywara <andre.przywara@arm.com> Reviewed-by: Jagan Teki <jagan@openedev.com> |
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