brain-hackers_pepepper-mirror
/
linux-brain
mirror of https://github.com/brain-hackers/linux-brain.git
1
0
Fork 0
Code Issues Projects Releases Wiki Activity

thermal: exynos: remove parsing of samsung, tmu_reference_voltage property 

Since pdata reference_voltage values are SoC (not platform) specific
just move it from platform data to struct exynos_tmu_data instance.
Then remove parsing of samsung,tmu_reference_voltage property.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org>
Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
This commit is contained in:
Bartlomiej Zolnierkiewicz 2018-04-16 12:12:00 +02:00 committed by Eduardo Valentin
parent e3ed36499b
commit 61020d189d
2 changed files with 15 additions and 7 deletions
Show Stats Download Patch File Download Diff File Expand all files Collapse all files

18
drivers/thermal/samsung/exynos_tmu.c
View File

@ -123,6 +123,8 @@
#define EXYNOS5433_PD_DET_EN 1
#define EXYNOS5433_G3D_BASE 0x10070000
/*exynos5440 specific registers*/
#define EXYNOS5440_TMU_S0_7_TRIM 0x000
#define EXYNOS5440_TMU_S0_7_CTRL 0x020
@ -190,6 +192,9 @@
* @max_efuse_value: maximum valid trimming data
* @temp_error1: fused value of the first point trim.
* @temp_error2: fused value of the second point trim.
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
* @regulator: pointer to the TMU regulator structure.
* @reg_conf: pointer to structure to register with core thermal.
* @ntrip: number of supported trip points.
@ -214,6 +219,7 @@ struct exynos_tmu_data {
u32 min_efuse_value;
u32 max_efuse_value;
u16 temp_error1, temp_error2;
u8 reference_voltage;
struct regulator *regulator;
struct thermal_zone_device *tzd;
unsigned int ntrip;
@ -369,7 +375,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
con &= ~(EXYNOS_TMU_REF_VOLTAGE_MASK << EXYNOS_TMU_REF_VOLTAGE_SHIFT);
con |= pdata->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
@ -1136,8 +1142,6 @@ static int exynos_of_sensor_conf(struct device_node *np,
ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
pdata->gain = (u8)value;
of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
pdata->reference_voltage = (u8)value;
of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
@ -1192,6 +1196,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
data->reference_voltage = 7;
data->efuse_value = 55;
data->min_efuse_value = 40;
data->max_efuse_value = 100;
@ -1208,6 +1213,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
data->reference_voltage = 16;
data->efuse_value = 55;
if (data->soc != SOC_ARCH_EXYNOS5420 &&
data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
@ -1223,6 +1229,10 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
if (res.start == EXYNOS5433_G3D_BASE)
data->reference_voltage = 23;
else
data->reference_voltage = 16;
data->efuse_value = 75;
data->min_efuse_value = 40;
data->max_efuse_value = 150;
@ -1234,6 +1244,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
data->reference_voltage = 16;
data->efuse_value = 0x5d2d;
data->min_efuse_value = 16;
data->max_efuse_value = 76;
@ -1245,6 +1256,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
data->reference_voltage = 17;
data->efuse_value = 75;
data->min_efuse_value = 15;
data->max_efuse_value = 100;

4
drivers/thermal/samsung/exynos_tmu.h
View File

@ -42,16 +42,12 @@ enum soc_type {
* struct exynos_tmu_platform_data
* @gain: gain of amplifier in the positive-TC generator block
* 0 < gain <= 15
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
* @cal_type: calibration type for temperature
*
* This structure is required for configuration of exynos_tmu driver.
*/
struct exynos_tmu_platform_data {
u8 gain;
u8 reference_voltage;
u32 cal_type;
};